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| AO4620 Complementary Enhancement Mode Field Effect Transistor General Description The AO4620 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in inverter and other applications.Standard Product AO4620 is Pb-free (meets ROHS & Sony 259 specifications). Features n-channel VDS (V) = 30V ID = 7.2A (VGS=10V) RDS(ON) < 24m (VGS=10V) < 36m (VGS=4.5V) p-channel -30V -5.3A (VGS = -10V) RDS(ON) < 38m (VGS = -10V) < 60m (VGS = -4.5V) S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 D2 D1 SOIC-8 S2 G1 S1 n-channel p-channel Max p-channel -30 20 -5.3 -4.5 -30 2 1.44 17 43 -55 to 150 Units V V A Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Max n-channel Symbol VDS Drain-Source Voltage 30 VGS Gate-Source Voltage 20 Continuous Drain 7.2 TA=25C F Current TA=70C 6.2 ID B Pulsed Drain Current IDM 30 TA=25C F Power Dissipation TA=70C Avalanche Current B B Repetitive avalanche energy 0.3mH Junction and Storage Temperature Range PD IAR EAR TJ, TSTG 2 1.44 13 25 -55 to 150 W A mJ C Thermal Characteristics: n-channel and p-channel Parameter A t 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-LeadC A t 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead Symbol RJA RJL RJA RJL Device n-ch n-ch n-ch p-ch p-ch p-ch Typ 50 80 32 50 80 32 Max 62.5 100 40 62.5 100 40 Units C/W C/W C/W C/W C/W C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4620 N-CHANNEL Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=30V, VGS=0V TJ=55C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=7.2A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=5A Forward Transconductance VDS=5V, ID=7.2A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125C 1 30 20 26 29 24 0.77 1 2.5 660 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 110 87 0.8 11.3 VGS=10V, VDS=15V, ID=7.2A 5.7 2.1 3 4.5 VGS=10V, VDS=15V, RL=2.1, RGEN=3 IF=7.2A, dI/dt=100A/s 3.1 15.1 2.7 15.5 7.1 20 1.5 14.125 792 24 32 36 1.6 Min 30 1 5 100 3 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=7.2A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. F.The power dissipation and current rating are based on the t 10s thermal resistance rating. Rev 1:Feb 2007 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4620 N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 10V 25 4.5V 20 ID (A) 15 10 3.5V 5 VGS=3V 0 0 1 2 3 4 5 VDS (Volts) Figure 1: On-Region Characteristics 35 VGS=4.5V Normalized On-Resistance 30 RDS(ON) (m) 1.4 1.6 VGS=10V ID=7.2A 0 1.5 2 2.5 3 3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics 4 6V 4V ID(A) 5V 20 VDS=5V 16 12 8 125C 25C VGS=10V, VDS=15V, ID=7.4A 1.2 VGS=4.5V ID=5A 25 1 V =10V, VGSGS=10V VDS=15V, RL=2.0, RGEN=3 20 0.8 15 0 5 10 IF=7.4A, dI/dt=100A/s 15 20 0.6 -50 -25 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage IF=7.4A, dI/dt=100A/s 60 ID=7.2A 50 RDS(ON) (m) 1.0E+01 1.0E+00 1.0E-01 125C IS (A) 40 125C 1.0E-02 25C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 30 1.0E-03 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 20 1.0E-04 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 25C 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. AO4620 N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 VGS (Volts) 6 4 2 0 0 2 4 6 8 10 12 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=15V ID=7.2A Capacitance (pF) 1000 800 Ciss 600 400 Coss 200 Crss 0 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 0 100.0 10s 10.0 ID (Amps) RDS(ON) limited 0.1s 10s 0.1 TJ(Max)=150C TA=25C DC 10ms 100s Power (W) 1ms 30 25 20 15 10 5 0 0.001 TJ(Max)=150C TA=25C 1.0 0.0 0.01 0.1 1 VDS (Volts) 10 100 0.01 0.1 1 10 100 1000 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=T on/T TJ,PK=T A+PDM.ZJA.RJA RJA=100C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL PD COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 0.1 OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Ton FUNCTIONS AND RELIABILITY WITHOUT NOTICE. T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. AO4620 P-CHANNEL Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-30V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-10V, ID=-5.3A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-4.5V, I D=-4.5A Forward Transconductance VDS=-5V, ID=-5.3A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125C -1 -30 31 42 48 15 -0.77 -1 -2.5 980 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 150 115 2.2 18.7 VGS=-10V, VDS=-15V, ID=-5.3A 9.6 3.2 4.8 7.7 VGS=-10V, VDS=-15V, RL=2.8, RGEN=3 IF=-5.3A, dI/dt=100A/s 6 20 7 21 13 26 3.3 24 1225 60 38 -2 Min -30 -1 -5 100 -3 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-5.3A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. F.The power dissipation and current rating are based on the t 10s thermal resistance rating. Rev1:Feb 2007 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4620 P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 -10V 25 -6V 20 -ID (A) -ID(A) 15 10 5 0 0 1 2 3 4 5 -VDS (Volts) Figure 1: On-Region Characteristics 60 VGS=-4.5V 50 RDS(ON) (m) Normalized On-Resistance 1.80 VGS=-4.5V 1.60 1.40 1.20 1.00 0.80 -50 -25 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature ID=-4.5A VGS=-10V ID=-5.6A 2.00 VGS=-3V -3.5V -4V 20 15 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -VGS(Volts) Figure 2: Transfer Characteristics 125C 25C 30 -4.5V 25 VDS=-5V 40 30 VGS=-10V 20 10 0 5 10 15 20 25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 80 70 60 RDS(ON) (m) 50 40 30 20 10 0 3 4 5 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 125C ID=-5.6A 1.0E+01 1.0E+00 1.0E-01 125C -IS (A) 1.0E-02 1.0E-03 1.0E-04 25C 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. AO4620 P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 VDS=-15V ID=-5.6A Capacitance (pF) 1500 1250 Ciss 1000 750 500 Coss 250 0 0 4 8 12 16 20 0 5 10 15 20 25 30 -Qg (nC) Figure 7: Gate-Charge Characteristics -VDS (Volts) Figure 8: Capacitance Characteristics Crss 8 -VGS (Volts) 6 4 2 0 100.0 10s 10.0 ID (Amps) RDS(ON) limited 1.0 10s DC 0.1 TJ(Max)=150C TA=25C 0.0 0.01 1 10 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 0.1 100 10ms 0.1s 100s Power (W) 1m 30 25 20 15 10 5 0 0.001 TJ(Max)=150C TA=25C 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=100C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 1 10 Pulse0.1 Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 100 1000 T Alpha & Omega Semiconductor, Ltd. |
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